CONVECTION IN THE BRIDGMAN GROWTH OF NARROW-GAP SEMICONDUCTORS

Authors
BRESCHI R FANO V ORTALLI I
Citation
R. Breschi et al., CONVECTION IN THE BRIDGMAN GROWTH OF NARROW-GAP SEMICONDUCTORS, Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics, 17(9), 1995, pp. 1067-1075
Citations number
15
Categorie Soggetti
Physics
Journal title
Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics → ACNP
ISSN journal
03926737
Volume
17
Issue
9
Year of publication
1995
Pages
1067 - 1075
Database
ISI
SICI code
0392-6737(1995)17:9<1067:CITBGO>2.0.ZU;2-D
Abstract
The free convection in the melt during the crystal growth of small-gap semiconductors, and its influence on the electrical properties are di scussed. Dimensionless parameters of the fluid flow, electrical proper ties of PbTe, Pb1-xSnxTe and Hg1-xCdxTe single crystals, grown by vert ical Bridgman technique at very low velocity, and some structures, fou nd in these materials, support the presence of free convection.