K. Gurunathan et al., ELECTROCHEMICAL PREPARATION AND CHARACTERIZATION OF RUTHENIUM DISULFIDE FILMS, Materials research bulletin, 30(12), 1995, pp. 1579-1582
This paper embodies the first report on the electrochemical deposition
of RuS2 thin films. The as-deposited and heat-treated films (in argon
atmosphere) were characterized by XRD, SEM and UV-VIS-NIR spectrophot
ometry. The polycrystalline deposits of RuS2 obtained indicated a cubi
c structure with a lattice constant of 5.685 Angstrom, an average grai
n size around 3 mu m, and an absorption coefficient of 5 x 10(4) cm(-1
). The optical band gap was found to be 1.48 eV.