AN INVESTIGATION OF X-RAY REFLECTIVITY AND DIFFRACTION FROM ELECTROLUMINESCENT SHORT-PERIOD SI-GE SUPERLATTICE STRUCTURES

The structural properties of short-period molecular beam epitaxy grown p-i-n doped Si17Ge2 superlattices with ten, five and two periods were investigated by x-ray triple-axis diffractometry and x-ray reflectivi ty at glancing incidence. The x-ray analysis of these structures shows that they are pseudomorphic and yields information in particular on t he interface roughness parameter evaluated in terms of the electron de nsity profile which follows from the analysis of the x-ray reflectivit y.