SELECTIVE-AREA DEPOSITION OF DIAMOND THIN-FILMS ON PATTERNS OF POROUSSILICON BY HOT-FILAMENT CHEMICAL-VAPOR-DEPOSITION

Diamond thin films, 5 mu m in thickness, were grown selectively on pat terns of porous silicon by hot-filament chemical vapor deposition (HFC VD). Monocrystalline p-type silicon substrates, with (100) orientation and resistivity 5-15 Ohm cm, were patterned by conventional photolith ography to provide a photoresist mask for selective anodization. The p olycrystalline diamond films thus formed were studied by scanning elec tron microscopy, x-ray diffraction, and Raman spectroscopy which revea led high selectivity and high quality diamond films. This process prov ed to be simple and yet effective in developing patterns of diamond fi lm in different shapes and sizes. (C) 1995 American Institute of Physi cs.