INFLUENCE OF LOW-ENERGY AR-SPUTTERING ON THE ELECTRONIC-PROPERTIES OFINAS-BASED QUANTUM-WELL STRUCTURES

Authors
MAGNEE PHC DENHARTOG SG VANWEES BJ KLAPWIJK TM VANDEGRAAF W BORGHS G
Citation
Phc. Magnee et al., INFLUENCE OF LOW-ENERGY AR-SPUTTERING ON THE ELECTRONIC-PROPERTIES OFINAS-BASED QUANTUM-WELL STRUCTURES, Applied physics letters, 67(24), 1995, pp. 3569-3571
Citations number
9
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
67
Issue
24
Year of publication
1995
Pages
3569 - 3571
Database
ISI
SICI code
0003-6951(1995)67:24<3569:IOLAOT>2.0.ZU;2-Y
Abstract
The influence of low energy (80-500 eV) Ar-ion milling cleaning techni ques on InAs based quantum well structures is investigated. It is foun d that both etching with a Kaufmann source and sputter-etching with a rf-plasma enhances the electron density and reduces the mobility. An a nneal at 180 degrees C has little effect, and only recovers damage cau sed by low energy (80 eV) Kaufmann etching. (C) 1995 American Institut e of Physics.