VACANCY GENERATION RESULTING FROM ELECTRICAL DEACTIVATION OF ARSENIC

Authors
LAWTHER DW MYLER U SIMPSON PJ ROUSSEAU PM GRIFFIN PB PLUMMER JD
Citation
Dw. Lawther et al., VACANCY GENERATION RESULTING FROM ELECTRICAL DEACTIVATION OF ARSENIC, Applied physics letters, 67(24), 1995, pp. 3575-3577
Citations number
18
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
67
Issue
24
Year of publication
1995
Pages
3575 - 3577
Database
ISI
SICI code
0003-6951(1995)67:24<3575:VGRFED>2.0.ZU;2-9
Abstract
Electrical deactivation of arsenic in highly doped silicon has been st udied using the positron-beam technique. Direct experimental evidence linking the formation of arsenic-vacancy complexes (i.e., As-n-v) to t he deactivation process is reported. The average number of arsenic ato ms per complex, (n) over bar>2, was determined by comparing the observ ed complex concentrations with those of the deactivated arsenic inferr ed from Hall-effect measurements. (C) 1995 American Institute of Physi cs.