ORIGINS OF INTERFACIAL DISORDER IN GASB INAS SUPERLATTICES/

The interface surfaces of short-period GaSb/InAs superlattices grown b y molecular beam epitaxy have been studied in situ with scanning tunne ling microscopy. Migration enhanced epitaxy was used at the interfaces in order to control bond type. Interfaces on GaSb(001) are found to b e smoother than those on strained InAs(001), and the InSb-like interfa ces are smoother than GaAs-like ones. The primary source of disorder a t these interfaces appears to be the kinetically determined topography of the growth surfaces, with intermixing playing a secondary role. (C ) 1995 American Institute of Physics.