ELECTRICAL-PROPERTIES OF SCHOTTKY-BARRIER FORMED ON AS-GROWN AND OXIDIZED SURFACE OF HOMOEPITAXIALLY GROWN DIAMOND(001) FILM

Characteristics of Schottky barriers formed on homoepitaxial diamond f ilm have been studied. Current-voltage characteristics of Al contacts on both the as-grown film and the oxidized film show rectification. On the other hand, ohmic property is observed on Au/as-grown film while Au/oxidized film shows rectification. These results imply that the mec hanism of the barrier formation on the as-grown diamond is drastically changed by oxidation. The difference of electrical properties between the as-grown film and the oxidized film is also observed from capacit ance-voltage characteristics. This result suggests that additional acc epters which are not related to boron, exist in the as-grown film and disappear after oxidation. (C) 1995 American Institute of Physics.