ROOM-TEMPERATURE PHOTOLUMINESCENCE OF ERBIUM-DOPED HYDROGENATED AMORPHOUS-SILICON

Citation
Ms. Bresler et al., ROOM-TEMPERATURE PHOTOLUMINESCENCE OF ERBIUM-DOPED HYDROGENATED AMORPHOUS-SILICON, Applied physics letters, 67(24), 1995, pp. 3599-3601
Citations number
9
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
67
Issue
24
Year of publication
1995
Pages
3599 - 3601
Database
ISI
SICI code
0003-6951(1995)67:24<3599:RPOEHA>2.0.ZU;2-P
Abstract
A comparison of the photoluminescence of Er-doped hydrogenated amorpho us silicon and crystalline silicon a-Si:H(Er) and c-Si(Er), is present ed. It is shown that a-Si:H(Er) exhibits efficient room-temperature ph otoluminescence at 1.537 mu m which is as strong as the emission from optimized c-Si(Er) at 2 K. Most remarkably, there is practically no te mperature quenching of the emission intensity in the range 2-300 K. Th e experiments suggest that the lifetime connected with the Er-induced emission is considerably shorter in a-Si:H(Er) than in c-Si(Er) which may be responsible for the different dependences of the photoluminesce nce intensity on the temperature, chopping frequency, and excitation p ower. (C) 1995 American Institute of Physics.