BANDGAP SHIFTED INGAASP INP QUANTUM-WELL WAVE-GUIDES USING MEV ION-IMPLANTATION/

A large blue shift of the bandgap 90 nm, in an InGaAsP/InP quantum wel l (QW) pin laser structure using a single-step MeV phosphorous ion imp lantation is reported. The absorption constant at the original band-ed ge was reduced from 110cm(-1) to only 4cm(-1). No excess loss in the w aveguide due to the QW intermixing process was observed. Current/volta ge measurements indicate that junction characteristics are well mainta ined, providing a means of producing side-by-side active and passive s ections using a simple, single processing step on laser structures fab ricated using standard growth techniques.