H. Murai et al., LASING CHARACTERISTICS UNDER HIGH-TEMPERATURE OPERATION OF 1.55-MU-M STRAINED INGAASP INGAALAS MQW LASER WITH INALAS ELECTRON STOPPER LAYER/, Electronics Letters, 31(24), 1995, pp. 2105-2107
The authors have developed a 1.55 mu m strained InGaAsP/ InGaAlAs MQW
laser with an InAlAs electron stopper layer. The device showed low thr
eshold current and high maximum temperature. Superior lasing character
istics have been demonstrated through comparison with conventional str
ained MQW lasers.