LASING CHARACTERISTICS UNDER HIGH-TEMPERATURE OPERATION OF 1.55-MU-M STRAINED INGAASP INGAALAS MQW LASER WITH INALAS ELECTRON STOPPER LAYER/

Citation
H. Murai et al., LASING CHARACTERISTICS UNDER HIGH-TEMPERATURE OPERATION OF 1.55-MU-M STRAINED INGAASP INGAALAS MQW LASER WITH INALAS ELECTRON STOPPER LAYER/, Electronics Letters, 31(24), 1995, pp. 2105-2107
Citations number
4
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
ISSN journal
00135194
Volume
31
Issue
24
Year of publication
1995
Pages
2105 - 2107
Database
ISI
SICI code
0013-5194(1995)31:24<2105:LCUHOO>2.0.ZU;2-H
Abstract
The authors have developed a 1.55 mu m strained InGaAsP/ InGaAlAs MQW laser with an InAlAs electron stopper layer. The device showed low thr eshold current and high maximum temperature. Superior lasing character istics have been demonstrated through comparison with conventional str ained MQW lasers.