A TAYLOR-GALERKIN FINITE-ELEMENT METHOD FOR THE HYDRODYNAMIC SEMICONDUCTOR EQUATIONS

Authors
BOVA S CAREY GF
Citation
S. Bova et Gf. Carey, A TAYLOR-GALERKIN FINITE-ELEMENT METHOD FOR THE HYDRODYNAMIC SEMICONDUCTOR EQUATIONS, IEEE transactions on computer-aided design of integrated circuits and systems, 14(12), 1995, pp. 1437-1444
Citations number
26
Categorie Soggetti
Computer Application, Chemistry & Engineering","Computer Science Hardware & Architecture
Journal title
IEEE transactions on computer-aided design of integrated circuits and systems → ACNP
ISSN journal
02780070
Volume
14
Issue
12
Year of publication
1995
Pages
1437 - 1444
Database
ISI
SICI code
0278-0070(1995)14:12<1437:ATFMFT>2.0.ZU;2-6
Abstract
A new Taylor-Galerkin finite element method and adaptive, time-iterati ve scheme are developed for simulating single-carrier submicron-scale semiconductor device transport with the hydrodynamic model under the a ssumptions of parabolic energy bands, Boundary conditions are applied using characteristic projections, Numerical studies are conducted to i nvestigate the sensitivity of the given model to some of the parameter s contained in typical heat flux and relaxation time models for a one- dimensional, representative test problem.