THE FORMATION OF RADIATION-INDUCED DEFECT IN SILICON, IRRADIATED BY ELECTRONS UNDER THE TEMPERATURES OF 20-K-300-K

Authors
KORSHUNOV FP MUDRY AV PATUK AI SHAKIN IA
Citation
Fp. Korshunov et al., THE FORMATION OF RADIATION-INDUCED DEFECT IN SILICON, IRRADIATED BY ELECTRONS UNDER THE TEMPERATURES OF 20-K-300-K, Doklady Akademii nauk BSSR, 37(5), 1993, pp. 31-34
Citations number
15
Categorie Soggetti
Multidisciplinary Sciences
Journal title
Doklady Akademii nauk BSSR → ACNP
ISSN journal
0002354X
Volume
37
Issue
5
Year of publication
1993
Pages
31 - 34
Database
ISI
SICI code
0002-354X(1993)37:5<31:TFORDI>2.0.ZU;2-A
Abstract
Low temperature luminescence of silicon crystals irradiated at 20 K wi th 3 MeV electrons has been investigated. It is found that carbon impu rity atoms interacts with primary radiation damage at low temperature 20 K. It is suggested that Si-G12 EPR centers modified by carbon (or s ilicon) interstitial atom are responsible for the electron-vibronic ba nd at 0,8559 eV in luminescence spectra.