Fp. Korshunov et al., THE FORMATION OF RADIATION-INDUCED DEFECT IN SILICON, IRRADIATED BY ELECTRONS UNDER THE TEMPERATURES OF 20-K-300-K, Doklady Akademii nauk BSSR, 37(5), 1993, pp. 31-34
Low temperature luminescence of silicon crystals irradiated at 20 K wi
th 3 MeV electrons has been investigated. It is found that carbon impu
rity atoms interacts with primary radiation damage at low temperature
20 K. It is suggested that Si-G12 EPR centers modified by carbon (or s
ilicon) interstitial atom are responsible for the electron-vibronic ba
nd at 0,8559 eV in luminescence spectra.