Ge. Carver et al., NONDESTRUCTIVE OPTICAL TECHNIQUES FOR CHARACTERIZING SEMICONDUCTOR-MATERIALS AND DEVICES, AT&T technical journal, 73(2), 1994, pp. 66-76
In the information age, communications technology depends on the effic
ient manufacture of photonic and electronic devices. Optical testing p
romotes manufacturing efficiency by controlling the quality of incomin
g materials, providing rapid feedback for process improvements, and an
alyzing why a product has failed. New, non-destructive optical techniq
ues are being used to measure key properties of semiconductor material
s and devices. Optical mapping reveals defective regions in various ty
pes of wafers, as well as in semiconductor-based lasers and detectors
used in AT&Ts lightwave communication systems. New optical testing tec
hniques include optical beam-induced reflectance (OBIR), whose signals
are used to map silicon, and spatially resolved photoluminescence (SR
PL), which performs high-resolution mapping of III-V semiconductor mat
erials.