NONDESTRUCTIVE OPTICAL TECHNIQUES FOR CHARACTERIZING SEMICONDUCTOR-MATERIALS AND DEVICES

Citation
Ge. Carver et al., NONDESTRUCTIVE OPTICAL TECHNIQUES FOR CHARACTERIZING SEMICONDUCTOR-MATERIALS AND DEVICES, AT&T technical journal, 73(2), 1994, pp. 66-76
Citations number
11
Categorie Soggetti
Computer Science Hardware & Architecture",Telecommunications
Journal title
ISSN journal
87562324
Volume
73
Issue
2
Year of publication
1994
Pages
66 - 76
Database
ISI
SICI code
8756-2324(1994)73:2<66:NOTFCS>2.0.ZU;2-2
Abstract
In the information age, communications technology depends on the effic ient manufacture of photonic and electronic devices. Optical testing p romotes manufacturing efficiency by controlling the quality of incomin g materials, providing rapid feedback for process improvements, and an alyzing why a product has failed. New, non-destructive optical techniq ues are being used to measure key properties of semiconductor material s and devices. Optical mapping reveals defective regions in various ty pes of wafers, as well as in semiconductor-based lasers and detectors used in AT&Ts lightwave communication systems. New optical testing tec hniques include optical beam-induced reflectance (OBIR), whose signals are used to map silicon, and spatially resolved photoluminescence (SR PL), which performs high-resolution mapping of III-V semiconductor mat erials.