NONDESTRUCTIVE EVALUATION OF THE PARAMETERS OF SILICON EPITAXIAL, STRUCTURES BY LONGWAVE SPECTROSCOPY

Authors
KOPYLOV AA TELPOV SE
Citation
Aa. Kopylov et Se. Telpov, NONDESTRUCTIVE EVALUATION OF THE PARAMETERS OF SILICON EPITAXIAL, STRUCTURES BY LONGWAVE SPECTROSCOPY, Russian journal of nondestructive testing, 31(3), 1995, pp. 186-189
Citations number
4
Categorie Soggetti
Materials Science, Characterization & Testing
Journal title
Russian journal of nondestructive testing → ACNP
ISSN journal
10618309
Volume
31
Issue
3
Year of publication
1995
Pages
186 - 189
Database
ISI
SICI code
1061-8309(1995)31:3<186:NEOTPO>2.0.ZU;2-K
Abstract
Results are presented from theoretical and experimental studies into t he development of effective methods of evaluating the parameters of mi croelectronics materials on the basis of longwave infrared Fourier spe ctroscopy. Layer thicknesses are determined and estimates are made of the concentrations and mobilities of charge carriers in the substrate. The metrological characteristics of the method are substantiated in e xperimental studies of silicon structures.