THE INFLUENCE OF THE IMAGE POTENTIAL ON ELECTRON TRANSMISSIVITY IN A DOUBLE-BARRIER RESONANT-TUNNELING DIODE

Authors
LI WS TENG XY
Citation
Ws. Li et Xy. Teng, THE INFLUENCE OF THE IMAGE POTENTIAL ON ELECTRON TRANSMISSIVITY IN A DOUBLE-BARRIER RESONANT-TUNNELING DIODE, Physics letters. A, 209(3-4), 1995, pp. 223-226
Citations number
16
Categorie Soggetti
Physics
Journal title
Physics letters. A → ACNP
ISSN journal
03759601
Volume
209
Issue
3-4
Year of publication
1995
Pages
223 - 226
Database
ISI
SICI code
0375-9601(1995)209:3-4<223:TIOTIP>2.0.ZU;2-L
Abstract
The influence of the image potential on electron transmissivity in a d ouble barrier resonant tunneling diode is investigated. Theoretical ca lculations have shown significant shifts of resonant tunneling peaks i n devices made of II-VI semiconductors, while in III-V systems such an effect is very small.