XPS INVESTIGATION OF ELECTRON-BEAM EFFECTS ON A TRIMETHYLSILANE DOSEDSI(100) SURFACE

A trimethylsilane covered Si(100) surface at temperature - 120 degrees C was bombarded by 1.3 keV electrons for various time intervals. The core level Si2p and C1s electrons were studied after each electron bom bardment by use of X-ray photoelectron spectroscopy. The spontaneous d issociation of TMSiH on the Si(100) surface was observed judging from the formation of C-C bonds. The C-C and C-Si bonds increased initially and then saturated after similar to 20 min of electron exposure. The binding energy of C 1s in C-C and C-Si bonds and that of Si2p in Si-C bonds showed an opposite behavior under electron irradiation. The form er increased and the latter decreased at the beginning of the irradiat ion and then both increase rate and decrease rate reduced. From the pr evious results of electron stimulated desorption and temperature progr ammed desorption, and the variation of electron density distribution a round C and Si, it is-concluded that the de-hydrogenation in C-H-n and Si-C-H-m bonds was induced and new Si-C and C-Si bonds were formed by electron irradiation on TMSiH covered Si(100) surface.