MORPHOLOGY, ATOMIC COMPOSITION AND PHOTOELECTRIC PROPERTIES OF THE MICRORELIEF INP-ELECTROLYTE INTERFACE

Authors
DMITRUK NL BASIUK EV KOLBASOV GY YAKUBTSOV OA MOLCHANOVSKII IA TARANETS TA
Citation
Nl. Dmitruk et al., MORPHOLOGY, ATOMIC COMPOSITION AND PHOTOELECTRIC PROPERTIES OF THE MICRORELIEF INP-ELECTROLYTE INTERFACE, Applied surface science, 90(4), 1995, pp. 489-495
Citations number
8
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
90
Issue
4
Year of publication
1995
Pages
489 - 495
Database
ISI
SICI code
0169-4332(1995)90:4<489:MACAPP>2.0.ZU;2-M
Abstract
Morphology and atomic composition of anisotropically etched surfaces o f InP have been studied by Auger electron spectroscopy (AES) and scann ing electron microscopy (SEM). The photoelectric properties and the vo ltage-capacitance characteristics of the InP-electrolyte interface hav e been investigated. A correlation between these properties and the su rface morphology and atomic composition was shown. The highest photose nsitivity was found for flat stoichiometric surfaces with an optimal t ransition layer between the oxide and the semiconductor and a low cont ent of In in its oxide.