PHOTOVOLTAIC EFFECT OF ZNTE-CD1-XMNXTE1-YSEY HETEROJUNCTIONS IN PRESENCE OF MAGNETIC-FIELD

Photovoltaic effect of the ZnTe-Cd1-xMnxTe1-ySey heterojunctions, prep ared by vapor-transport epitaxy of ZnTe on Cd1-xMnxTe1-ySey substrate was studied. The photovoltaic measurements were carried out over the t emperature range from 12 k to 300 K and in the magnetic field up to 6 T. In the magnetic held, maximum of the sensitivity corresponding to t he energy of the forbidden gap of Cd1-xMnxTe1-ySey substrate splits in to two components for sigma(+) and sigma(-) circular polarizations of incident light. This phenomenon was ascribed to the exchange interacti on of the magnetic moments of Mn++ ions with band electrons. From the value of the splitting energy the exchange integral N-0(alpha - beta) was determined to be 1.15 +/- 0.2 eV.