GD 4F AND 5D ELECTRONS IN SN0.96GD0.04TE VALENCE-BAND

The synchrotron radiation was applied to measure resonant photoemissio n spectra (Fano-type Gd 4d-4f resonance), constant initial states and constant final states to study the valence band electronic structure o f Sn0.96Gd0.04Te crystal. The resonant energy was found equal to 150.3 eV. The electrons 4f were found to contribute to the valence band of the crystal with the maximum located at 9.5 eV below the valence band edge whereas 5d electrons contribute at the crystal valence band edge.