GROWTH OF GAN METALORGANIC CHEMICAL-VAPOR-DEPOSITION LAYERS ON GAN SINGLE-CRYSTALS

The homoepitaxial growth of GaN layers has been achieved for the first time. Bulk GaN single crystals which have been used as a substrate ha ve been grown from diluted solution of atomic nitrogen in the liquid g allium at 1600 degrees C and at nitrogen pressure of about 15-20 kbar. It is shown that a terrace growth of GaN epitaxial layer has been rea lized. The high quality of the GaN film has been confirmed by luminesc ence measurements. The analysis of donor-acceptor and exciton luminesc ence is presented.