A negative magnetoresistance is observed in Si/SiGe modulation doped h
eterostructures which is attributed to the single particle quantum int
erference (weak localization) effect. From analysis of the experimenta
l data the electron phase coherence time tau phi is extracted to follo
w a (aT + bT(2))(-1) dependence. The evaluated prefactor alpha = 0.25
is below the theoretical limit of 0.5, but agrees with observations in
Si and GaAs/AlGaAs heterostructures.