DEEP ELECTRON TRAPS IN CDTE-IN FILMS GROWN BY MOLECULAR-BEAM EPITAXY

N-type indium doped CdTe grown on n(+)-GaAs by molecular beam epitaxy has been studied by the standard deep level transient spectroscopy and the isothermal Laplace-transform deep level transient spectroscopy. I t was found that the Cd/Te flux ratio strongly influences the deep lev el transient spectroscopy results. The unusual temperature dependence of the electron emission rate in films grown at nearly stoichiometric conditions may point out that the observed defect is resonant with the conduction band.