ELECTROEPITAXIAL GROWTH OF GASB AND ALGASB THICK EPITAXIAL LAYERS

Authors
ZYTKIEWICZ ZR DOBOSZ D
Citation
Zr. Zytkiewicz et D. Dobosz, ELECTROEPITAXIAL GROWTH OF GASB AND ALGASB THICK EPITAXIAL LAYERS, Acta Physica Polonica. A, 88(5), 1995, pp. 965-968
Citations number
6
Categorie Soggetti
Physics
Journal title
Acta Physica Polonica. A → ACNP
ISSN journal
05874246
Volume
88
Issue
5
Year of publication
1995
Pages
965 - 968
Database
ISI
SICI code
0587-4246(1995)88:5<965:EGOGAA>2.0.ZU;2-R
Abstract
Semi-bulk epitaxial layers of GaSb and AlGaSb up to 3 and 1 mm thick, respectively; were successfully grown by the liquid phase electroepita xy on GaSb substrates. The growth procedure allowed us to achieve high crystallographic perfection as well as compositional uniformity of te rnary layers.