GASB DOTS GROWN ON GAAS SURFACE BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION

Authors
BOZEK R BABINSKI A BARANOWSKI JM STEPNIEWSKI R KLUSEK Z OLEJNICZAK W STAROWIEYSKI K WROBEL J
Citation
R. Bozek et al., GASB DOTS GROWN ON GAAS SURFACE BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Acta Physica Polonica. A, 88(5), 1995, pp. 974-976
Citations number
3
Categorie Soggetti
Physics
Journal title
Acta Physica Polonica. A → ACNP
ISSN journal
05874246
Volume
88
Issue
5
Year of publication
1995
Pages
974 - 976
Database
ISI
SICI code
0587-4246(1995)88:5<974:GDGOGS>2.0.ZU;2-U
Abstract
We report metaloorganic chemical vapour deposition growth of an anisot ropic GaSb islands on GaAs (001) surface with a typical dimensions aro und 200 nm. Results of investigations employing scanning electron micr oscope, scanning tunnelling microscope and photocapacitance are presen ted.