OPTICALLY DETECTED CYCLOTRON-RESONANCE STUDIES OF HIGH-ELECTRON-MOBILITY ALGAAS GAAS STRUCTURES/

Optically detected cyclotron resonance is used for the identification of recombination transitions of two-dimensional electron gas in AlGaAs /GaAs heterostructures. Two photoluminescence emissions are attributed to the recombination of the two-dimensional electron gas. These-are t he so-called R-band and the Fermi level singularity photoluminescence. Optical detection of cyclotron resonance is related to the change of the band bending across the GaAs active layer and the AlGaAs barrier, which is caused by impact ionization of shallow donors in the barrier region. Influence of a long range carrier scattering on ionized impuri ties on a mobility of the two-dimensional carriers is studied.