CONTACTLESS ELECTROREFLECTANCE STUDY OF TEMPERATURE-DEPENDENCE OF FUNDAMENTAL-BAND GAP OF ZNSE

We report a systematic study of the temperature variation of the energ y [E(0)(T)] and broadening parameter [Gamma(0)(T)] of the fundamental band gap of ZnSe in the range 27 K < T < 370 K using contactless elect roreflectance. The obtained values of E(0)(T) and Gamma(0)(T) have bee n fit to various semi-empirical expressions to obtain information abou t the exciton-phonon coupling in this system. The experimentally deter mined E(0)(T) also is of significance for technological applications s ince it can be used to determine the operating temperature of ZnSe-bas ed devices such as quantum well lasers.