MBE GROWTH OF YBTE ON GAAS(100) AND BAF2(111) SUBSTRATES

The structural properties of MBE grown YbTe layers were investigated b y X-ray diffraction methods and photoluminescence measurements. YbTe f ilms were grown on the ZnTe and CdTe buffer layers crystallised on the GaAs(100) 2 degrees off oriented substrates and on the BaF2(100) subs trates. In the case of GaAs substrates the two-dimensional growth mode of YbTe was observed on reflection high energy electron diffraction p icture. Results of tile X-ray rocking curve and photoluminescence exci tation measurements indicate that the structural properties of YbTe fi lms are comparable to the properties of the MBE grown ZnTe and CdTe la yers on the GaAs(100) substrates. The measured values of the YbTe latt ice constant parallel and perpendicular to the growth plane show that the 1 mu m thick layers are partially strained. The full width at half maximum values of the X-ray rocking curves are the smallest (900 are seconds) for the YbTe films crystallised on the 2 mu m thick CdTe buff er layer grown on the GaAs(100) substrate. In the case of BaF2(111) su bstrate the two-dimensional MBE growth mode of YbTe was not observed.