PLASMA EDGE MODIFICATION IN STRONGLY COMPENSATED SEMICONDUCTORS

Authors
SZUSZKIEWICZ W DYBKO K BARDYSZEWSKI W JULIEN C
Citation
W. Szuszkiewicz et al., PLASMA EDGE MODIFICATION IN STRONGLY COMPENSATED SEMICONDUCTORS, Acta Physica Polonica. A, 88(5), 1995, pp. 1048-1052
Citations number
8
Categorie Soggetti
Physics
Journal title
Acta Physica Polonica. A → ACNP
ISSN journal
05874246
Volume
88
Issue
5
Year of publication
1995
Pages
1048 - 1052
Database
ISI
SICI code
0587-4246(1995)88:5<1048:PEMISC>2.0.ZU;2-7
Abstract
We demonstrate that the electron-impurity interaction can modify the r eflectivity in the vicinity of plasma minimum giving rise to a small d ip on the plasma edge. Experimental spectra taken for Hg1-xCoxSe for x < 0.02 at various temperatures confirm this theoretical prediction. T he position of the structure can be used to determine the plasma frequ ency in highly compensated materials at low temperatures.