GAN LAYERS GROWN BY REACTIVE ION PLATING

GaN layers grown on ceramics, sapphire or SiC substrates using reactiv e ion plating method are presented. In reactive ion plating method gal lium from a hot source reacts on a heated substrate with nitrogen part ially ionized. Rutherford backscattering technique was applied to chec k the composition of the samples and gallium to nitrogen ratio was fou nd to be close to one. However, Rutherford backscattering studies show ed also a remarkable amount of unintentional impurities present in the layers. The structure of GaN was determined using reflection high-ene rgy electron diffraction. It appeared that polycrystal and monocrystal can be grown, depending on growth conditions. Absorption spectra take n on the layers grown on sapphire showed a tail of band to band absorp tion starting at about 370 nm. Carrier concentration was of the order of 10(19)-10(20) Cm-3 at room temperature and did not change much with temperature decrease. No luminescence from the layers was detected, m ost probably due to high concentration of impurities.