APPLICATION OF THE BACK GATE IN MOS WEAK INVERSION TRANSLINEAR CIRCUITS

Citation
J. Mulder et al., APPLICATION OF THE BACK GATE IN MOS WEAK INVERSION TRANSLINEAR CIRCUITS, IEEE transactions on circuits and systems. 1, Fundamental theory andapplications, 42(11), 1995, pp. 958-962
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic
ISSN journal
10577122
Volume
42
Issue
11
Year of publication
1995
Pages
958 - 962
Database
ISI
SICI code
1057-7122(1995)42:11<958:AOTBGI>2.0.ZU;2-E
Abstract
Though the MOS transistor is a four-terminal device, it is most often used as a three-terminal device. Therefore, a large number of possible MOS circuits are overlooked. In this brief, the four-terminal point o f view is elaborated with respect to MOS weak inversion translinear ci rcuits, a class of circuits naturally very suitable for low-voltage an d low-power applications. Some new circuits are described which someti mes are more suitable for low-voltage applications than bipolar transl inear networks performing the same function. It is also shown that, us ing the back gate, translinear networks can be derived which cannot be realized with bipolar transistors. These network topologies increase the possibilities offered bg translinear technology. As an example, me asurement results of a low input-voltage current mirror and a sin(x)ci rcuit are shown.