G. Lutz et As. Schwarz, SILICON DEVICES FOR CHARGED-PARTICLE TRACK AND VERTEX DETECTION, Annual review of nuclear and particle science, 45, 1995, pp. 295-335
The discovery of relatively long-lived charmed particles in 1976 promp
ted physicists to reexamine the superb properties of semiconductor det
ectors for energy and position measurements. In the early 1980s the fi
rst silicon strip detectors were successfully used as charged-particle
track and vertex detectors to filter the decays of charmed particles
out of the huge debris of hadrons produced in proton-nucleus interacti
ons. The successful application of these devices soon led to proposals
to use them also in colliding beam experiments. These initiatives res
ulted in an intense research and development program that focused on c
ustom-designed, very highly integrated readout electronics and low-mas
s but high-stability support structures and that sought to characteriz
e the damaging effects of ionizing radiation to be encountered in high
-rate accelerators. In this article we first outline the basics of sem
iconductor physics and then give a detailed description of silicon str
ip detectors, pixel devices, and novel detector structures currently u
nder development. The damaging effects of ionizing radiation on both t
he detecting elements and the readout electronics are briefly addresse
d. The problems encountered in moving from a single semiconductor dete
ctor element to a large detector system to be used for research in ele
mentary particle physics are illustrated by the discussion of two larg
e-scale experimental applications: a state-of-the-art fixed-target exp
eriment and a colliding-beam experiment.