PHOTOVOLTAIC CELL WITH AN A-CBN LAYER

Authors
MICHALSKI A SOKOLOWSKA A
Citation
A. Michalski et A. Sokolowska, PHOTOVOLTAIC CELL WITH AN A-CBN LAYER, Thin solid films, 266(2), 1995, pp. 110-112
Citations number
13
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
Thin solid films → ACNP
ISSN journal
00406090
Volume
266
Issue
2
Year of publication
1995
Pages
110 - 112
Database
ISI
SICI code
0040-6090(1995)266:2<110:PCWAAL>2.0.ZU;2-R
Abstract
A photovoltaic cell was produced by depositing a 1 mu m thick layer of a-cBN doped with S on a p-type Si wafer, using a pulse plasma generat or of special construction which allowed coverage of large areas with a layer of uniform thickness. The heterojunction showed a photovoltaic effect by illuminating with a c.w. lamp with a filament temperature o f 2300 K. The photovoltaic voltage was 0.25 V and the photoresponse cu rve was asymmetric.