PHOTOVOLTAIC EFFECTS IN METAL SEMICONDUCTOR BARRIER STRUCTURES WITH BORON-DOPED POLYCRYSTALLINE DIAMOND FILMS/

Authors
POLYAKOV VI PEROV PI ROSSUKANYI NM RUKOVISHNIKOV AI KHOMICH AV PRELAS MA KHASAWINAH S SUNG T POPOVICI G
Citation
Vi. Polyakov et al., PHOTOVOLTAIC EFFECTS IN METAL SEMICONDUCTOR BARRIER STRUCTURES WITH BORON-DOPED POLYCRYSTALLINE DIAMOND FILMS/, Thin solid films, 266(2), 1995, pp. 278-281
Citations number
7
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
Thin solid films → ACNP
ISSN journal
00406090
Volume
266
Issue
2
Year of publication
1995
Pages
278 - 281
Database
ISI
SICI code
0040-6090(1995)266:2<278:PEIMSB>2.0.ZU;2-L
Abstract
Metal/semiconductor unipolar barrier structures with boron-doped polyc rystalline diamond films were fabricated and their electrical and phot oelectric properties investigated. The photovoltage of a photoconverte r exceeded 0.7 V as measured in open circuit and could be controlled b y the bias voltage. A memory effect was evidenced in metal/polycrystal line diamond structures which consists of an increasing photovoltage a fter a short time biasing.