QUANTITATIVE-DETERMINATION OF THE OXYGEN PARTIAL-PRESSURE EFFECT ON THE PERPENDICULAR MAGNETIZATION OF TBFECO THIN-FILMS

Authors
CHAO S WANG BY WU KL HUANG DR
Citation
S. Chao et al., QUANTITATIVE-DETERMINATION OF THE OXYGEN PARTIAL-PRESSURE EFFECT ON THE PERPENDICULAR MAGNETIZATION OF TBFECO THIN-FILMS, Thin solid films, 266(2), 1995, pp. 282-284
Citations number
6
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
Thin solid films → ACNP
ISSN journal
00406090
Volume
266
Issue
2
Year of publication
1995
Pages
282 - 284
Database
ISI
SICI code
0040-6090(1995)266:2<282:QOTOPE>2.0.ZU;2-7
Abstract
The oxygen partial pressure during the sputter process of TbFeCo thin films was controlled precisely. The effect of the oxygen partial press ure on the perpendicular magnetization of TbFeCo films was quantitativ ely studied. Between 5.4 X 10(-6) mbar and 1.29 x 10(-5) mbar oxygen p artial pressure, the films lost perpendicular magnetization rapidly an d became paramagnetic. Below this range, oxygen had no effect on the p erpendicular magnetization of the films.