DEFECT ENGINEERING IN II-III(2)-VI(4) AND RELATED-COMPOUNDS

Current achievements in controlling the physical properties of II-III2 -VI4 defective compounds and their solid solutions by employing differ ent methods of defect engineering are analysed. The main attention is paid to such effects as non-stoichiometry, order-disorder phase transi tions as well as to non-equilibrium treatment related phenomena. It ha s been established that the deviation of II-III2-VI4 Compound composit ion from stoichiometry is accompanied by an intensive formation of ant isite cationic defects. A significant disorder is characteristic for t he materials containing isoperiodical cations. Ion implantation is sho wn to be the most perspective tool for the purposive controlling of th e physical characteristics. The peculiarities of radiation defect anne aling as well as the application purposes of the materials involved fo r electronic devices possessing a high radiation stability are being d iscussed.