LASER-ABLATION DEPOSITION OF CUINSE2 THIN-FILMS ON SILICON AND FUSED-SILICA

CuInSe2 thin films were deposited by an in situ process on fused silic a and single crystal silicon substrates by pulsed laser ablation using a beam from an XeCl excimer laser focused on a polycrystalline target . The effect of deposition temperature and substrate material on the s tructure and orientation of the films was investigated. The structure and properties of the films were studied by X-ray diffraction, micro-R aman spectroscopy and scanning electron microscopy. The composition of the target material was largely maintained in the films deposited bel ow 450-degrees-C. The films were highly oriented with the (I 12) plane s of the chalcopyrite structure along the substrate surface, except fo r the films deposited above 350-degrees-C on to Si(100) which develope d a {100} orientation.