FORMATION OF CUIN(GA)SE2 THIN-FILMS BY SELENIZATION AND APPLICATION TO SOLAR-CELLS

Preparation conditions of device-quality CuInSe2 (CIS) and CuIn1-xGaxS e2 (CIGS) thin films were studied. We formed CIS and CIGS films by ann ealing different types of precursor films, such as Gu/In stacked films and Cu-In-Se co-deposited films, under H2Se atmosphere. We obtained C I(G)S films with large grain size using precursors prepared at 200-deg rees-C. The grain sizes of CI(G)S film using stacked precursors were l arger than those using co-deposited precursors. Use of co-deposited pr ecursors reduced formation of MoSe2 at Mo/CI(G)S boundary during selen ization process. Fill-factor (FF) exceeding 0.7 was obtained for CIS c ells using co-deposited precursors prepared at substrate temperature o f 200-degrees-C.