Thin CuInSe2 films were prepared by selenization of sputtered metal pr
ecursors. The surface morphology, phase comPosition and adhesion at th
e Mo/glass substrate of the ternary compound have been correlated to t
he structure of the precursor. Single phase, homogeneous, small graine
d (I mum) CuInSe2 arises from precursors showing stable phases (Cu11In
9 and In). An ordered vacancy compound (CuIn3Se5) is likely present in
In-rich (In>27 at.%) films. Precursors with a high content of the met
astable CuIn2 phase show a very poor adhesion to the substrate.