CHARACTERIZATION BY PHOTOLUMINESCENCE OF ICB-GROWN CUINSE2 THIN-FILMS

CuInSe2 thin films were prepared by the ICB (ionized cluster beam) tec hnique on glass substrates. It is found that the apparent grain size i ncreased more than 1 mum when Cu cluster is ionized, even in In-excess CuInSe2 films which usually shows a specular surface with a small gra in size of less than 0.2 mum. These films were characterized by photol uminescence (PL) spectra employing Ar and YAG lasers as excitation sou rces. In those films with a slightly In-excess composition, the 0.85 e V-peak was observed, which has been correlated with the good solar cel ls performance. The PL peak gained intensity with the increase of acce leration voltage of In-cluster up to 2 kV. It is concluded that ICB is a promising technique for preparation of good quality CuInSe2 thin fi lms for solar cells.