LIQUID-PHASE EPITAXIAL-GROWTH AND CHARACTERIZATION OF HIGH-QUALITY GAINASSB INAS FOR PHOTODIODES

Authors
GONG XY KAN H YAMAGUCHI T SUZUKI I AOYAMA M KUMAGAWA M ROWELL NL AIGUO W RINFRET R
Citation
Xy. Gong et al., LIQUID-PHASE EPITAXIAL-GROWTH AND CHARACTERIZATION OF HIGH-QUALITY GAINASSB INAS FOR PHOTODIODES, JPN J A P 1, 32, 1993, pp. 125-127
Citations number
9
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS → ACNP
Volume
32
Year of publication
1993
Supplement
32-3
Pages
125 - 127
Database
ISI
SICI code
Abstract
The device-quality Ga1-xInxAs1-ySby/InAs epilayers have been obtained by doping Gd in the growth melt. The optical properties for epilayers were investigated by using Fourier Transform Infrared (FTIR) photolumi nescence (PL) measurements. The PL Full Width at Half Maximum (FWHM) a s narrow as 4.67 meV have been achieved indicating high quality of epi layers. The excitation density and temperature dependence of PL spectr a were studied. The results indicated that wave-vector-conserving tran sition is valid at room temperature for this material. Photodiodes hav e been fabricated using p-n junction GaInAsSb epilayers. The dark curr ent lower than 1 muA at 77 K has been realized.