In the present work variation of the two main parameters-viscosity and
critical cooling rate, required for the recent upcoming optical data
storage devices, have been analysed for different compositions of Se80
-xSbxTe20 (0 less-than-or-equal-to x less-than-or-equal-to 9) system.
Temperature dependence of viscosity has been determined using the acti
vation energy for glass transition and for crystallization obtained fr
om heating rate dependence of glass transition temperature and peak cr
ystallization temperature from DSC measurements. Vicsocity has been es
timated with the help of Vogel-Tamman-Fulcher equation. It has been fo
und that for samples containing Sb less-than-or-equal-to 4 at. %, the
viscosity increases with the increase in Sb content. Further increase
in Sb concentration causes a decrease in the viscosity. These results
are consistent with the structural changes taking place in the Se-Te s
ystem with increase in Sb content. Using these values of viscosity and
kinetics of crystal nucleation and growth process, the time-temperatu
re-transformation curves were obtained. The critical cooling rate R(c)
is found to increase for Sb > 4 at. %. For good reversible phase chan
ge optical recording, the critical cooling rate of the material should
be high enough so as to get an erasure time of less than 1 mus. From
the analysis of the data the suitability of the SeTeSb system for opti
cal recording has been discussed.