LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION OF CUALSE2 EPITAXIAL-FILMS

Authors
CHICHIBU S SHIRAKATA S SUDO R UCHIDA M HARADA Y MATSUMOTO S HIGUCHI H ISOMURA S
Citation
S. Chichibu et al., LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION OF CUALSE2 EPITAXIAL-FILMS, JPN J A P 1, 32, 1993, pp. 139-141
Citations number
9
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS → ACNP
Volume
32
Year of publication
1993
Supplement
32-3
Pages
139 - 141
Database
ISI
SICI code
Abstract
A low-pressure metalorganic chemical vapor deposition of CuAlSe2 epita xial films was performed using several kinds of metalorganic precursor s. The film quality varied remarkably depending on the source precurso rs. Free exciton emission at 2.739 eV was observed in the CuAlSe2 film s grown using triisobutylaluminium and diethylselenium, both of which have lower decomposition temperatures.