ANALYSIS OF THE ELECTRONIC STATES OF PHOSPHORUS INTERSTITIALS IN PHOSPHORUS-IMPLANTED COPPER INDIUM DISULFIDE BY THE MOLECULAR-ORBITAL APPROACH

Authors
HSU YJ HWANG HL
Citation
Yj. Hsu et Hl. Hwang, ANALYSIS OF THE ELECTRONIC STATES OF PHOSPHORUS INTERSTITIALS IN PHOSPHORUS-IMPLANTED COPPER INDIUM DISULFIDE BY THE MOLECULAR-ORBITAL APPROACH, JPN J A P 1, 32, 1993, pp. 456-458
Citations number
8
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS → ACNP
Volume
32
Year of publication
1993
Supplement
32-3
Pages
456 - 458
Database
ISI
SICI code
Abstract
The electronic states of the phosphorus interstitials in phosphorus-im planted copper indium disulfide are analyzed by using molecular orbita ls. The result shows that electron transfer from the interstitial phos phorus atom to its neghboring sulfur ions occurs in the ground state.