SHALLOW LEVELS IN CUINS2

By correlating the various analytical results of Photo-Hall, Photolumi nescence, and Differential Hall measurements with the stoichiometry, t he related defect structure distributed in the forbidden gap of CuInS2 semiconductor in which the shallow levels were specified. We obtained four shallow donor levels are 11 meV, 18 meV, 31 meV and 38.5 meV and two more deep donor levels 70 meV and 145 meV below the conduction ba nd edge for the n-CuInS2. The donor level located at 38.5 meV had been identified as sulfur vacancy, and other shallow levels were not ident ified. We also obtained that there are three acceptor levels as 0.11 e V, 0.155 eV and 0.17 eV above the valence band for the p-type CuInS2. The acceptor level located at about 0.105 eV and 0.155 eV above valenc e band had been identified. The acceptor level located at 0.17 eV abov e the valence band were also cognized by the Photo-Hall measurement. I t could be identified such acceptor level as an electron trap.