PHOTOREFLECTANCE CHARACTERIZATION OF CUALSE2 HETEROEPITAXIAL LAYERS GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION

Photoreflectance (PR) has been developed as a useful technique for the characterization of chalcopyrite heteroepitaxial layers. PR measureme nts at 77 K have been done on CuAlSe2 layers grown on GaAs and GaP sub strates by means of the low-pressure metalorganic chemical vapor depos ition technique. The analysis of the PR spectra in terms of transition energy, intensity and broadening parameter has led us to the successf ul characterization of the crystal quality, stress and the crystallogr aphic orientation in the CuAlSe2 epitaxial layer.