PHOTOTHERMAL EFFECT IN COMPOUND SEMICONDUCTORS CDINGAS4 AND CDIN2S4

Photothermal spectroscopy using thermistor is applied to study the hea t generation by nonradiative processes of compound semiconductors CdIn GaS4 and CdIn2S4 together with the optical absorption and reflectance measurements. It shows that the increases of heat generation are diffe rent from those of the total rate of optical energy absorption below t he fundamental absorption edge regions for CdInGaS4 and CdIn2S4. The i ncident light power dependence of photothermal signal intensity using Ar ion laser is non-linear for CdInGaS4 and CdIn2S4.