RED ELECTROLUMINESCENT DEVICES USING MN-DOPED CDS(SE)- AND CDTE-ZNS SUPERLATTICES

Citation
K. Hikida et al., RED ELECTROLUMINESCENT DEVICES USING MN-DOPED CDS(SE)- AND CDTE-ZNS SUPERLATTICES, JPN J A P 1, 32, 1993, pp. 506-508
Citations number
4
Categorie Soggetti
Physics, Applied
Volume
32
Year of publication
1993
Supplement
32-3
Pages
506 - 508
Database
ISI
SICI code
Abstract
Mn-doped CdSSeTe-ZnS superlattices (SLs) have been prepared by a hot w all technique, and double insulating electroluminescent devices of the SL layers have been prepared. The red shifted emission of 10-100 nm w avelength have been observed due to the high strain by the large latti ce mismatches (7.5-16%). The characteristics of the most shifted one ( CdTe-ZnS case) are the peak photon wavelength of 675 nm and the lumina nce of 450 cd/M2.