2.51 EV DONOR-ACCEPTOR PAIR PHOTOLUMINESCENCE FROM ZN-DOPED CUALSE2 EPILAYER GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION

Authors
CHICHIBU S SHIRAKATA S SUDO R UCHIDA M HARADA Y MATSUMOTO S HIGUCHI H ISOMURA S
Citation
S. Chichibu et al., 2.51 EV DONOR-ACCEPTOR PAIR PHOTOLUMINESCENCE FROM ZN-DOPED CUALSE2 EPILAYER GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION, JPN J A P 1, 32, 1993, pp. 531-533
Citations number
14
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS → ACNP
Volume
32
Year of publication
1993
Supplement
32-3
Pages
531 - 533
Database
ISI
SICI code
Abstract
A donor to acceptor pair photoluminescence (PL) peak at 2.51 eV was ob served in Zn-doped CuAlSe2 epilayers grown by low-pressure metalorgani c chemical vapor deposition. The summation of ionization energies of t he donor and the acceptor was obtained to be 330 meV from the excitati on intensity dependence of the PL peak energy. The Zn impurity is show n to act as a defect-killer because of the apperance of exciton emissi on at 2.716 eV.