CAVITY ENHANCEMENT OF RESONANT FREQUENCIES IN SEMICONDUCTOR-LASERS SUBJECT TO OPTICAL-INJECTION

The injection of an optical signal into a semiconductor laser biased n ear or above the lasing threshold modifies the coupling between the fr ee carriers and the intracavity field. The detuning between the freque ncy of the injected signal and the free-running oscillation frequency and the ratio of the photon lifetime to the carrier lifetime are key p arameters in determining the enhancement of the carrier-field resonant coupling frequency and the stability of the output field. Experimenta l results using a vertical cavity surface emitting laser biased near t hreshold are in agreement with calculations using a lumped-element osc illator model.